SD5400CY SOIC 14L ROHS

SD5000/5001/5400/5401 Quad N-Channel Lateral DMOS Switch, Zener Protected Product Summary Part Number V(BR)DS Min (V) rDS(on) Max (Ω) Crss Max (pF) tON Max (ns) SD5000I 20 VGS(th) Max (V) 1.5 70 @ VGS = 5 V 0.5 2 SD5000N 20 1.5 70 @ VGS = 5 V 0.5 2 SD5001N 10 1.5 70 @ VGS = 5 V 0.5 2 SD5400CY 20 1.5 75 @ VGS = 5 V 0.5 2 SD5401CY 10 1.5 75 @ VGS = 5 V 0.5 2 Features Benefits Applications • • • • • • • • • • • • • • • • • • Quad SPST Switch with Zener Input Protection Low Interelectrode Capacitance and Leakage Ultra-High Speed Switching―tON: 1 ns Ultra-Low Reverse Capacitance: 0.2 pF Low Guaranteed rDS @5 V Low Turn-On Threshold Voltage High-Speed System Performance Low Insertion Loss at High Frequencies Low Transfer Signal Loss Simple Driver Requirement Single Supply Operation Fast Analog Switch Fast Sample-and-Holds Pixel-Rate Switching Video Switch Multiplexer DAC Deglitchers High-Speed Driver Description The SD5000/5400 series of monolithic switches features four individual double-diffused enhancement-mode MOSFETs built on a common substrate. These bidirectional devices provide low onresistance and low interelectrode capacitances to minimize insertion loss and crosstalk. ultra-fast switching speeds. For manufacturing reliability, these devices feature poly-silicon gates protected by Zener diodes Built on Siliconix’ proprietary DMOS process, the SD5000/5400 series utilizes lateral construction to achieve low capacitance and For similar products packaged in TO-206AF (TO-72) and TO-253 (SOT-143) see the SD211DE/SST211 series. Doc 20113 09/02/2022 Rev# A12 ECN# SD5000/5001/5400/5401 The SD 5000/5400 are rated to handle ±10-V analog signals, while the SD5001/5401 are rated for ±5-V signals. www.linearsystems.com Page 1 of 4 SD5000/5001/5400/5401 Quad N-Channel Lateral DMOS Switch, Zener Protected Absolute Maximum Ratings (TA = 25ºC Unless Otherwise Noted) Gate-Drain, Gate-Source Voltage (SD5000, SD5400)………………………………………..…….……………+30V/-25V (SD5001, SD5401)………………………………………..…………….……+25V/-15V Gate-Substrate Voltage (SD5000, SD5400)……..……+30V/-0.3V (SD5001I, SD5401).....….…+25V/-0.3V Drain-Source Voltage (SD5000, SD5400)………………..…….20V (SD5001I, SD5401)……………….…….10V Drain-Source-Substrate Voltage (SD5000, SD5400)…….….……….25V (SD5001I, SD5401)………………….….15V Drain Current………………………………………………………………….….…...........50 mA Lead Temperature (1/16” from case for 10 seconds)……………………….300ºC Storage Temperature…………………………………………………….….…..-65 to 150ºC Operating Junction Temperature…..………………………………….…..-55 to 150ºC Power Dissipation”: (Package)……………………..……………….………500 mW (each Device)…..…………………………….………300 mW Notes: a. SD5000/SD5001I derate 5 mW/C above 25ºC b. SD5400/SD5401 derate 4 mW/C above 25ºC Specificationsa SD5000 SD5400 Parameter Symbolb Test Conditionsb Typc Min Limits SD5001 SD5401 Max Min Max Unit Static Drain-Source Breakdown Voltage V(BR)DS VGS=VBS=-5V, ID=10nA 30 20 10 Source-Drain Breakdown Voltage V(BR)SD VGD=VBD=-5V, IS=10nA 22 20 10 Drain-Substrate Breakdown Voltage V(BR)DBO VGB=0 V, ID=10µA, Source Open 35 25 15 Source-Substrate Breakdown Voltage V(BR)SBO VGB=0 V, IS=10µA, Drain Open 35 25 15 Drain-Source Leakage IDS(off) Source-Drain Leakage ISD(off) Gate Leakage IGBS Threshold Voltage VGS(th) VGS= VBS=-5 V VGD= VBD=-5 V VDS= 10 V 0.4 VDS= 15 V 0.7 VDS= 20 V 0.9 VSD= 10 V 0.5 VSD= 15 V 0.8 VSD= 20 V Drain-Source On-Resistance Resistance Match rDS(on) V 10 10 10 1 10 VDB = VSB = 0 V, VGB =30V 0.01 100 100 VDS = VGS, ID = I µA, VSB =0V 0.8 1.5 1.5 58 70 70 60 75 75 SD5000 Series VGS = 5 V SD5400 Series VGS = 5 V VSB = 0 V ID = 1 mA ∆rDS(on) VGS = 10 V 38 VGS = 15 V 30 VGS = 20 V 26 VGS = 5 V 1 SD5000 Series 12 10 10 SD5400 Series 11 9 9 nA V Ω 5 5 Dynamic Forward Transconductance Gate Node Capacitance gfs VDS = 10 V VSB = 0 V lD = 20 mA f = 1 kHz mS C(GS+GD+GB) Drain Node Capacitance C(GD+DB) Source Node Capacitance C(GS+SB) Reverse Transfer Capacitance Crosstalk Doc 20113 09/02/2022 Rev# A12 ECN# SD5000/5001/5400/5401 VDS = 10 V f = 1 MHz VGS = VBS = -15V Crss f = 3 kHz www.linearsystems.com SD5000 Series 2.5 3.5 3.5 2.0 3 3 3.7 5 5 0.2 0.5 0.5 -107 pF dB Page 2 of 4 SD5000/5001/5400/5401 Quad N-Channel Lateral DMOS Switch, Zener Protected Specificationsa SD5000 SD5400 Parameter Symbolb Test Conditionsb Typc Min Limits SD5001 SD5401 Max Min Max Unit Switching td(on) Turn-On Time tr td(off) Turn-Off Time VSB= 1-5 Vin, VGN 0 to 5 V, RG = 25 Ω VDD = 5 V, RL = 680 Ω tf 0.5 1 1 0.6 1 1 2 ns 6 DMCA . Switching Time Test Circuit VIN High Low Switch (On/Off) On Off VOUT GND VDD Notes: a. TA = 25ºC unless otherwise noted. b. B is the body (substrate) and V(BR) is breakdown. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Doc 20113 09/02/2022 Rev# A12 ECN# SD5000/5001/5400/5401 www.linearsystems.com Page 3 of 4 SD5000/5001/5400/5401 Quad N-Channel Lateral DMOS Switch, Zener Protected Package Dimensions: SOIC 14 Lead Narrow Body Plastic Package S/B (Side Braze) DIP 16 Lead Dual In Line Package Ordering Information: PDIP 16 Lead Dual In Line Plastic Package Standard Part Call-Out SD5000N PDIP 16L RoHS SD5001N PDIP 16L RoHS SD5000I S/B DIP 16L RoHS SD5400CY SOIC 14L RoHS SD5401CY SOIC 14L RoHS Custom Part Call-Out (Custom Parts Include SEL + 4 Digit Numeric Code) SD5000N PDIP 16L RoHS SELXXXX SD5001N PDIP 16L RoHS SELXXXX SD5000I S/B DIP 16L RoHS SELXXXX SD5400CY SOIC 14L RoHS SELXXXX SD5401CY SOIC 14L RoHS SELXXXX Doc 20113 09/02/2022 Rev# A12 ECN# SD5000/5001/5400/5401 www.linearsystems.com Page 4 of 4